BSC0500NSIATMA1-INFINEON TECHNOLOGIES-30V 186A 1.3mΩ@4.5V,30A 2.5W 2V 1 N-Channel TDSON-8 MOSFETs ROHS

BSC0500NSIATMA1-INFINEON TECHNOLOGIES-30V 186A 1.3mΩ@4.5V,30A 2.5W 2V 1 N-Channel TDSON-8 MOSFETs ROHS. This is a high-performance N-channel MOSFET designed for low-voltage, high-current switching applications. It features a drain-source voltage of 30 V, a continuous drain current of 186 A, and a very low on-resistance of 1.3 mΩ at 4.5 V, ensuring minimal conduction losses. With a gate threshold voltage of 2 V and a power dissipation capability of 2.5 W, it is optimized for efficient operation. Note: Images for reference only.

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Specifications:

Manufacturer: INFINEON TECHNOLOGIES Technologies Package: TDSON-8 Drain to Source Voltage: 30V Current - Continuous Drain(Id): 186A Operating Temperature: -55℃~+150℃ RDS(on): 1.3mΩ@4.5V,30A Pd - Power Dissipation: 2.5W Gate Threshold Voltage (Vgs(th)@Id): 2V Reverse Transfer Capacitance (Crss@Vds): 83pF@15V Number: 1 N-Channel Input Capacitance(Ciss): 3.3nF@15V Gate Charge(Qg): 18nC@4.5V For detailed specifications, please refer to datasheet in Attachments.

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Package Includes:

1 x BSC0500NSIATMA1-INFINEON TECHNOLOGIES-30V 186A 1.3mΩ@4.5V,30A 2.5W 2V 1 N-Channel TDSON-8 MOSFETs ROHS