FDMS8018-ONSEMI-30V 175A 83W 1.8mΩ@10V,30A 1V 1 N-Channel Power-56-8 MOSFETs ROHS

FDMS8018-ONSEMI-30V 175A 83W 1.8mΩ@10V,30A 1V 1 N-Channel Power-56-8 MOSFETs ROHS, is a high-current N-channel power MOSFET designed for ultra-efficient switching in low-voltage applications. It supports a drain-source voltage of 30 V and can handle an exceptionally high continuous drain current of 175 A, with an extremely low on-resistance of 1.8 mΩ at 10 V, minimizing conduction losses. It ensures fast and reliable switching performance. Note: Images for reference only.

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Specifications:

Manufacturer: onsemi Package: Power-56-8 Drain to Source Voltage: 30V Operating Temperature: -55℃~+150℃ Current - Continuous Drain(Id): 175A Pd - Power Dissipation: 83W RDS(on): 1.8mΩ@10V,30A Gate Threshold Voltage (Vgs(th)@Id): 1V Reverse Transfer Capacitance (Crss@Vds): 210pF@15V Number: 1 N-Channel Input Capacitance(Ciss): 5.235nF@15V For detailed specifications, please refer to datasheet in Attachments.

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Package Includes:

1 x FDMS8018-ONSEMI-30V 175A 83W 1.8mΩ@10V,30A 1V 1 N-Channel Power-56-8 MOSFETs ROHS