FDMS86252L-ONSEMI-150V 12A 46mΩ@10V,4.4A 50W 3V 1 N-Channel Power-56-8 MOSFETs ROHS

FDMS86252L-ONSEMI-150V 12A 46mΩ@10V,4.4A 50W 3V 1 N-Channel Power-56-8 MOSFETs ROHS. This is an N-channel power MOSFET optimized for medium-voltage switching applications. It features a drain-to-source voltage of 150 V and supports a continuous drain current of 12 A, with a low on-resistance of 46 mΩ at 10 V gate drive for efficient operation. The device offers a maximum power dissipation of 50 W and a gate threshold voltage of 3 V, ensuring reliable switching performance even in demanding conditions. Housed in a compact Power-56-8 surface-mount package, it provides excellent thermal handling and board space efficiency, making it suitable for DC-DC converters, power supplies, and motor control applications. Note: Images for reference only.

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Specifications:

Manufacturer: onsemi Package: Power-56-8 Drain to Source Voltage: 150V Operating Temperature: -55℃~+150℃@(Tj) Current - Continuous Drain(Id): 12A RDS(on): 46mΩ@10V,4.4A Pd - Power Dissipation: 50W Gate Threshold Voltage (Vgs(th)@Id): 3V Reverse Transfer Capacitance (Crss@Vds): 3pF@75V Number: 1 N-Channel Input Capacitance(Ciss): 1.335nF@75V Gate Charge(Qg): 15nC@10V For detailed specifications, please refer to datasheet in Attachments.

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Package Includes:

1 x FDMS86252L-ONSEMI-150V 12A 46mΩ@10V,4.4A 50W 3V 1 N-Channel Power-56-8 MOSFETs ROHS