FDS2572-ONSEMI-150V 4.9A 40mΩ@10V,4.9A 2.5W 2V 1 N-Channel SO-8 MOSFETs ROHS

FDS2572-ONSEMI-150V 4.9A 40mΩ@10V,4.9A 2.5W 2V 1 N-Channel SO-8 MOSFETs ROHS. This is a high-performance N-channel MOSFET designed for low- to medium-voltage switching applications. It features a drain-source voltage of 150 V, a continuous drain current of 4.9 A, and a low on-resistance of 40 mΩ at VGS = 10 V, delivering efficient conduction and minimal power loss. Packaged in a compact SO-8 surface-mount case, it supports 2.5 W power dissipation and a low gate threshold voltage of 2 V, making it ideal for DC-DC converters, load switching, power management, and portable electronics. Note: Images for reference only.

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Specifications:

Manufacturer: onsemi Package: SO-8 Drain to Source Voltage: 150V Operating Temperature: -55℃~+150℃ Current - Continuous Drain(Id): 4.9A RDS(on): 40mΩ@10V,4.9A Pd - Power Dissipation: 2.5W Gate Threshold Voltage (Vgs(th)@Id): 2V Reverse Transfer Capacitance (Crss@Vds): 80pF@25V Number: 1 N-Channel Input Capacitance(Ciss): 2.87nF@25V Gate Charge(Qg): 29nC@10V For detailed specifications, please refer to datasheet in Attachments.

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Package Includes:

1 x FDS2572-ONSEMI-150V 4.9A 40mΩ@10V,4.9A 2.5W 2V 1 N-Channel SO-8 MOSFETs ROHS