IPD096N08N3GATMA1-INFINEON TECHNOLOGIES-80V 73A 9.6mΩ@10V,46A 100W 3.5V 1 N-Channel TO-252-3 MOSFETs ROHS

IPD096N08N3GATMA1-INFINEON TECHNOLOGIES-80V 73A 9.6mΩ@10V,46A 100W 3.5V 1 N-Channel TO-252-3 MOSFETs ROHS. This is a robust N-channel power MOSFET optimized for low-voltage, high-current applications. It supports a drain-to-source voltage of 80 V and a continuous drain current of 73 A, delivering reliable performance in demanding power designs. With a low on-resistance of 9.6 mΩ at 10 V gate drive, it ensures reduced conduction losses and high efficiency. The device offers a power dissipation of 100 W and a gate threshold voltage of 3.5 V, making it suitable for efficient switching. Packaged in a compact TO-252-3 (DPAK) surface-mount package, it provides strong thermal handling and space-saving integration, making it ideal for DC-DC converters, motor drives, and power supply applications. Note: Images for reference only.

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Specifications:

Manufacturer: INFINEON TECHNOLOGIES Technologies Package: TO-252-3 Drain to Source Voltage: 80V Operating Temperature: -55℃~+175℃ Current - Continuous Drain(Id): 73A Type: N-Channel RDS(on): 9.6mΩ@10V Pd - Power Dissipation: 100W Gate Threshold Voltage (Vgs(th)@Id): 3.5V@46uA Reverse Transfer Capacitance (Crss@Vds): 20pF Number: 1 N-Channel Input Capacitance(Ciss): 2.41nF Gate Charge(Qg): 35nC@10V Output Capacitance(Coss): 652pF For detailed specifications, please refer to datasheet in Attachments.

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Package Includes:

1 x IPD096N08N3GATMA1-INFINEON TECHNOLOGIES-80V 73A 9.6mΩ@10V,46A 100W 3.5V 1 N-Channel TO-252-3 MOSFETs ROHS