IRL640PBF-VISHAY-200V 17A 270mΩ@4V,8.5A 125W 2V@250uA 1 N-Channel TO-220AB MOSFETs ROHS

IRL640PBF-VISHAY-200V 17A 270mΩ@4V,8.5A 125W 2V@250uA 1 N-Channel TO-220AB MOSFETs ROHS. This is a high-performance N-channel power MOSFET designed for efficient power switching applications. Housed in a robust TO-220AB package, it offers a 200 V drain-to-source voltage rating and supports a continuous drain current of 17 A at a case temperature of 25°C. The device features a low on-resistance of 180 mΩ at a gate-source voltage of 5 V, ensuring minimal conduction losses. Note: Images for reference only.

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Specifications:

Manufacturer: Vishay Intertech Package: TO-220AB Drain to Source Voltage: 200V Configuration: - Operating Temperature: -55℃~+150℃ Current - Continuous Drain(Id): 17A Type: N-Channel RDS(on): 270mΩ@4V,8.5A Pd - Power Dissipation: 125W Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA Reverse Transfer Capacitance (Crss@Vds): 120pF Number: 1 N-Channel Input Capacitance(Ciss): 1.8nF Gate Charge(Qg): 66nC@5.0V Output Capacitance(Coss): 400pF For detailed specifications, please refer to datasheet in Attachments.

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Package Includes:

1 x IRL640PBF-VISHAY-200V 17A 270mΩ@4V,8.5A 125W 2V@250uA 1 N-Channel TO-220AB MOSFETs ROHS