NVD5C464NT4G-ONSEMI-40V 59A 5.8mΩ@10V,30A 40W 4V 1 N-Channel DPAK MOSFETs ROHS

NVD5C464NT4G-ONSEMI-40V 59A 5.8mΩ@10V,30A 40W 4V 1 N-Channel DPAK MOSFETs ROHS. This is a high-performance N-channel MOSFET designed for efficient low-voltage power switching. It offers a drain-source voltage of 40 V, a continuous drain current of 59 A, and a low on-resistance of 5.8 mΩ at 10 V, ensuring reduced conduction losses. With a gate threshold voltage of 4 V and a power dissipation capability of 40 W, it is well-suited for high-efficiency applications. Packaged in a DPAK surface-mount package and fully RoHS compliant, this MOSFET is ideal for DC-DC converters, motor drives, power supply circuits, and other compact, high-current switching solutions. Note: Images for reference only.

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Specifications:

Manufacturer: onsemi Package: DPAK Drain to Source Voltage: 40V Operating Temperature: -55℃~+175℃ Current - Continuous Drain(Id): 59A RDS(on): 5.8mΩ@10V,30A Pd - Power Dissipation: 40W Gate Threshold Voltage (Vgs(th)@Id): 4V Reverse Transfer Capacitance (Crss@Vds): 32pF@25V Number: 1 N-Channel Input Capacitance(Ciss): 1.2nF@25V Gate Charge(Qg): 20nC@10V For detailed specifications, please refer to datasheet in Attachments.

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Package Includes:

1 x NVD5C464NT4G-ONSEMI-40V 59A 5.8mΩ@10V,30A 40W 4V 1 N-Channel DPAK MOSFETs ROHS