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RH6P040BHTB1-ROHM-100V 40A 15.6mΩ@10V,40A 59W 4V 1 N-Channel HSMT-8(3x3.2) MOSFETs ROHS — image 1
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ROHM

RH6P040BHTB1-ROHM-100V 40A 15.6mΩ@10V,40A 59W 4V 1 N-Channel HSMT-8(3x3.2) MOSFETs ROHS

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MOSFET for everyday users

The RH6P040BHTB1-ROHM-100V 40A 15.6mΩ@10V,40A 59W 4V 1 N-Channel HSMT-8(3x3.2) MOSFETs ROHS by ROHM is a value-for-money mosfet designed for everyday users. It features Manufacturer: ROHM and Case/Package: HSMT 8.

₹657
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Total: ₹657
Buying tip: A smart budget buy — solid performance without breaking the bank.
Estimated delivery: 25 Aug8 Sept
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Quick Specs

Manufacturer: ROHM
Case/Package: HSMT 8
Polarity: N Channel
Voltage Rating (V): 100
Shipping Weight: 0.001 kg
Shipping Dimensions: 1 × 1 × 1 cm

Ideal For

Everyday convenience
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SKU: robu-2811962Category: MOSFET

About This Product

The RH6P040BHTB1-ROHM-100V 40A 15.6mΩ@10V,40A 59W 4V 1 N-Channel HSMT-8(3x3.2) MOSFETs ROHS by ROHM is a value-for-money mosfet designed for everyday users. It delivers reliable performance at an accessible price.

Key Specifications

  • Manufacturer: ROHM
  • Case/Package: HSMT 8
  • Polarity: N Channel
  • Voltage Rating (V): 100 — works with standard household power
  • Shipping Weight: 0.001 kg
  • Shipping Dimensions: 1 × 1 × 1 cm

Why Buy from Elecvora?

Elecvora sources this product directly, cutting out multiple middlemen. Every order includes free shipping, a 15-day return policy, and secure payment via Razorpay.

RH6P040BHTB1-ROHM-100V 40A 15.6mΩ@10V,40A 59W 4V 1 N-Channel HSMT-8(3x3.2) MOSFETs ROHS. This is a high-performance N-channel MOSFET designed for power switching applications. It features a 100 V drain-to-source voltage rating and supports a continuous drain current of 40 A at a case temperature of 25°C. The device offers a low on-resistance of 15.6 mΩ at a gate-source voltage of 10 V, ensuring minimal conduction losses. Note: Images for reference only.

Specifications:

Manufacturer: ROHM Semicon Package: HSMT-8(3x3.2) Drain to Source Voltage: 100V Current - Continuous Drain(Id): 40A RDS(on): 15.6mΩ@10V,40A Pd - Power Dissipation: 59W Gate Threshold Voltage (Vgs(th)@Id): 4V Number: 1 N-Channel Input Capacitance(Ciss): 1.08nF@50V Gate Charge(Qg): 16.7nC@10V For detailed specifications, please refer to datasheet in Attachments.

Package Includes:

1 x RH6P040BHTB1-ROHM-100V 40A 15.6mΩ@10V,40A 59W 4V 1 N-Channel HSMT-8(3x3.2) MOSFETs ROHS