SI4164DY-T1-GE3-VISHAY-30V 30A 3.2mΩ@10V,30A 3.3W 2.5V 1 N-Channel SOIC-8 MOSFETs ROHS

SI4164DY-T1-GE3-VISHAY-30V 30A 3.2mΩ@10V,30A 3.3W 2.5V 1 N-Channel SOIC-8 MOSFETs ROHS, is an N-channel power MOSFET designed for high-efficiency switching in low-voltage applications. It features a drain-source voltage of 30 V and can handle a continuous drain current of 30 A, with a very low on-resistance of 3.2 mΩ at 10 V, minimizing conduction losses. It is suitable for DC-DC converters, power management circuits, and other high-current, low-voltage applications. Note: Images for reference only.

---

Specifications:

Manufacturer: Vishay Intertech Package: SOIC-8 Drain to Source Voltage: 30V Operating Temperature: -55℃~+150℃ Current - Continuous Drain(Id): 30A RDS(on): 3.2mΩ@10V,30A Pd - Power Dissipation: 3.3W Gate Threshold Voltage (Vgs(th)@Id): 2.5V Reverse Transfer Capacitance (Crss@Vds): 240pF@15V Number: 1 N-Channel Input Capacitance(Ciss): 3.545nF@15V Gate Charge(Qg): 26.5nC@10V For detailed specifications, please refer to datasheet in Attachments.

---

Package Includes:

1 x SI4164DY-T1-GE3-VISHAY-30V 30A 3.2mΩ@10V,30A 3.3W 2.5V 1 N-Channel SOIC-8 MOSFETs ROHS