SIS184LDN-T1-GE3-VISHAY-60V 5.4mΩ@10V,10A 3V 1 N-Channel MOSFETs ROHS — image 1

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SIS184LDN-T1-GE3-VISHAY-60V 5.4mΩ@10V,10A 3V 1 N-Channel MOSFETs ROHS

Name: SIS184LDN-T1-GE3-VISHAY-60V 5.4mΩ@10V,10A 3V 1 N-Channel MOSFETs ROHS
Brand: VISHAY
SKU: R246515
Price: 656 INR
Availability: InStock

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AI Summary

MOSFET for everyday users

The SIS184LDN-T1-GE3-VISHAY-60V 5.4mΩ@10V,10A 3V 1 N-Channel MOSFETs ROHS by VISHAY is a value-for-money mosfet designed for everyday users. It features Manufacturer: VISHAY and Polarity: N Channel.

₹656

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Quantity

Total: ₹656

Buying tip: A smart budget buy — solid performance without breaking the bank.

Estimated delivery: 24 Aug – 7 Sept

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Quick Specs

Manufacturer: VISHAY

Polarity: N Channel

Voltage Rating (V): 60

Shipping Weight: 0.001 kg

Shipping Dimensions: 1 × 1 × 1 cm

Ideal For

Everyday convenience

RoHS

SKU: robu-2812043Category: MOSFET

About This Product

The SIS184LDN-T1-GE3-VISHAY-60V 5.4mΩ@10V,10A 3V 1 N-Channel MOSFETs ROHS by VISHAY is a value-for-money mosfet designed for everyday users. It delivers reliable performance at an accessible price.

Key Specifications

Manufacturer: VISHAY
Polarity: N Channel
Voltage Rating (V): 60 — works with standard household power
Shipping Weight: 0.001 kg
Shipping Dimensions: 1 × 1 × 1 cm

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SIS184LDN-T1-GE3-VISHAY-60V 5.4mΩ@10V,10A 3V 1 N-Channel MOSFETs ROHS. This is a compact, high-efficiency N-channel MOSFET designed for low-voltage switching applications. It operates with a drain-source voltage of 60 V, supports up to 10 A continuous drain current, and delivers a very low on-resistance of 5.4 mΩ at 10 V, minimizing power loss. With a gate threshold voltage of 3 V and full RoHS compliance, this MOSFET is optimized for high-frequency switching in applications such as DC-DC converters, battery management, load switching, and other power management circuits requiring efficiency and reliability. Note: Images for reference only.

Specifications:

Manufacturer: Vishay Intertech Package: - Drain to Source Voltage: 60V Operating Temperature: -55℃~+150℃@(Tj) Current - Continuous Drain(Id): 18.7A;69.4A Pd - Power Dissipation: 3.7W;52W RDS(on): 5.4mΩ@10V,10A Gate Threshold Voltage (Vgs(th)@Id): 3V Reverse Transfer Capacitance (Crss@Vds): 41pF@30V Number: 1 N-Channel Input Capacitance(Ciss): 1.95nF@30V Gate Charge(Qg): 41nC@10V For detailed specifications, please refer to datasheet in Attachments.