STF8N80K5-STMICROELECTRONICS-800V 6A 950mΩ@10V,3A 25W 1 N-Channel TO-220F-3 MOSFETs ROHS

STF8N80K5-STMICROELECTRONICS-800V 6A 950mΩ@10V,3A 25W 1 N-Channel TO-220F-3 MOSFETs ROHS. STMicroelectronics is a high-voltage N-channel power MOSFET designed for robust switching and power conversion applications. It features a drain-source voltage of 800 V and a continuous drain current of 6 A, with a Rds(on) of 950 mΩ at Vgs = 10V, providing reliable conduction in medium-power circuits. The device can handle up to 25 W of power dissipation and has a gate threshold voltage of 3 A, ensuring dependable switching performance. Packaged in a TO-220F-3 through-hole package, it offers excellent thermal management and ease of mounting. Fully RoHS compliant, this MOSFET is ideal for power supplies, inverters, and industrial switching applications Note: Images for reference only.

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Specifications:

Manufacturer: STMicroelectronics Package: TO-220F-3 Drain to Source Voltage: 800V Current - Continuous Drain(Id): 6A RDS(on): 950mΩ@10V,3A Pd - Power Dissipation: 25W Gate Threshold Voltage (Vgs(th)@Id): - Number: 1 N-Channel For detailed specifications, please refer to datasheet in Attachments.

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Package Includes:

1 x STF8N80K5-STMICROELECTRONICS-800V 6A 950mΩ@10V,3A 25W 1 N-Channel TO-220F-3 MOSFETs ROHS